15 February 2006 Time-resolved photoluminescence studies of Mg-doped AlN epilayers
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Proceedings Volume 6118, Ultrafast Phenomena in Semiconductors and Nanostructure Materials X; 61180E (2006); doi: 10.1117/12.651856
Event: Integrated Optoelectronic Devices 2006, 2006, San Jose, California, United States
Mg-doped AlN epilayers grown by metalorganic chemical vapor deposition have been studied by deep UV time-resolved photoluminescence (PL) spectroscopy. A PL emission line at 6.02 eV has been observed at 10 K in Mgdoped AlN, which is about 40 meV below the free-exciton (FX) transition in undoped AlN epilayer. Temperature dependent measurement of the PL intensity of this emission line also reveals a binding energy of 40 meV. This transition line is believed to be due to the recombination of an exciton bound to neutral Mg acceptor (I1) with a binding energy, Ebx of 40 meV. The recombination lifetime of the I1 transition in Mg doped AlN have been measured to be 130 ps, which is close to the expected value. Excitation intensity dependence of time-resolved PL for Mg-doped AlN epilayer is also measured to understand carrier and exciton dynamics.
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N. Nepal, M. L. Nakarmi, J. Y. Lin, H. X. Jiang, "Time-resolved photoluminescence studies of Mg-doped AlN epilayers", Proc. SPIE 6118, Ultrafast Phenomena in Semiconductors and Nanostructure Materials X, 61180E (15 February 2006); doi: 10.1117/12.651856; https://doi.org/10.1117/12.651856

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