15 February 2006 Carrier dynamics in ion-implanted semiconductors studied by simulation and observation of terahertz emission
Author Affiliations +
Abstract
We have experimentally measured the terahertz radiation from a series of ion-implanted semiconductors, both from the bare semiconductor surface and from photoconductive switches fabricated on them. GaAs was implanted with arsenic ions, and InGaAs and InP with Fe+ iron ions, and all samples were annealed post implantation. An increase in emission power is observed at high frequencies, which we attribute to the ultrafast trapping of carriers. We use a three-dimensional carrier dynamics simulation to model the emission process. The simulation accurately predicts the experimentally observed bandwidth increase, without resorting to any fitting parameters. Additionally, we discuss intervalley scattering, the influence of space-charge fields, and the relative performance of InP, GaAs and InAs based photoconductive emitters.
© (2006) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
J. Lloyd-Hughes, J. Lloyd-Hughes, E. Castro-Camus, E. Castro-Camus, M. D. Fraser, M. D. Fraser, H. H. Tan, H. H. Tan, C. Jagadish, C. Jagadish, M. B. Johnston, M. B. Johnston, } "Carrier dynamics in ion-implanted semiconductors studied by simulation and observation of terahertz emission", Proc. SPIE 6118, Ultrafast Phenomena in Semiconductors and Nanostructure Materials X, 61180K (15 February 2006); doi: 10.1117/12.644074; https://doi.org/10.1117/12.644074
PROCEEDINGS
11 PAGES


SHARE
Back to Top