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15 February 2006 Time-resolved and time-integrated spectroscopy studies of the optical properties of silicon quantum dots
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Abstract
Using time-resolved and time-integrated photoluminescence and spectrally resolved two-colour three-pulse photon echo spectroscopy we study the quantum confinement and dephasing properties of near spherical Si QDs with an average size of 4.3 nm. Filling of the low energy states and parabolic confinement of the quantum dot structures can be inferred from the dependence of the photoluminescence intensity on the detection wavelengths. A dephasing time of 1 - 1.8 ps which is slightly dependent on the quantum dot energy states can be measured. We show that the dephasing time of the electrons in the quantum dots is strongly influenced by the density of excited carriers.
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Lap Van Dao, Xiaoming Wen, and Peter Hannaford "Time-resolved and time-integrated spectroscopy studies of the optical properties of silicon quantum dots", Proc. SPIE 6118, Ultrafast Phenomena in Semiconductors and Nanostructure Materials X, 61180P (15 February 2006); https://doi.org/10.1117/12.641101
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