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15 February 2006 Coherent plasmons in InSb
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Abstract
We study coherent plasmons in the narrow-gap semiconductor InSb by measuring the far-infrared electromagnetic radiation they emit. These collective oscillations are excited with ultrashort, near-infrared laser pulses having photon energy far above the semiconductor band gap. Coherent plasmon behavior is characterized as a function of temperature, doping density, optically injected carrier density, and spatial confinement.
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Michael P. Hasselbeck, Denis Seletskiy, L. Ralph Dawson, and Mansoor Sheik-Bahae "Coherent plasmons in InSb", Proc. SPIE 6118, Ultrafast Phenomena in Semiconductors and Nanostructure Materials X, 61180W (15 February 2006); https://doi.org/10.1117/12.641284
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