14 February 2006 THz semiconductor hot electron bolometer
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Abstract
A model of fast Semiconductor Hot Electron Bolometer (SHEB) is developed. In this bolometer radiation heats only electrons in bipolar semiconductor without inertial lattice heating. For conditions proposed, such heating changes both generation and recombination processes, that leads to the electron and hole concentration decreases. This and the electron mobility decrease, because of their heating, cause the semiconductor resistance rise, which is used for the output signal creation. Semiconductors with the high conductivity, mobility and electron energy relaxation time are important for the SHEB manufacturing. Narrow-gap semiconductors have such properties, and therefore the bolometer model is constructed for them. According to this model the SHEB on base of Hg0.8Cd 0.2Te at temperature of 77 K can have detectivity of (0.3-2)107 cmHz1/2/W for radiation frequency (0.01-1.5) THz.
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V. N. Dobrovolsky, V. N. Dobrovolsky, F. F. Sizov, F. F. Sizov, } "THz semiconductor hot electron bolometer", Proc. SPIE 6120, Terahertz and Gigahertz Electronics and Photonics V, 612009 (14 February 2006); doi: 10.1117/12.650341; https://doi.org/10.1117/12.650341
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