3 March 2006 Growth of GaN on patterned GaN/sapphire substrates with various metallic masks by high pressure solution method
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Abstract
In this work the results of high pressure solution growth of GaN on various patterned substrates are presented. The growth on GaN/sapphire substrates patterned in GaN parallel stripes and with SixNy and Mo masks between stripes is studied and analyzed. The results are compared with the growth on patterned substrates without any mask, thus with a bare sapphire between stripes. The usefulness of tungsten and iridium for masking is also determined. The HVPE free standing GaN substrates with high stripes, up to 10 mm, are examined in details. The stripes growth modes are shown and described.
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M. Bockowski, I. Grzegory, G. Nowak, G. Kamler, B. Łucznik, M. Wróblewski, P. Kwiatkowski, K. Jasik, S. Krukowski, S. Porowski, "Growth of GaN on patterned GaN/sapphire substrates with various metallic masks by high pressure solution method", Proc. SPIE 6121, Gallium Nitride Materials and Devices, 612103 (3 March 2006); doi: 10.1117/12.645066; https://doi.org/10.1117/12.645066
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