Polarization management techniques for enhanced vertical and lateral transport in III-nitride superlattices

Mohammad Z. Kauser; Andrei Osinsky; Brian Hertog; Amir Dabiran; Peter Chow

doi:10.1117/12.657894

3 March 2006 Polarization management techniques for enhanced vertical and lateral transport in III-nitride superlattices

Mohammad Z. Kauser, Andrei Osinsky, Brian Hertog, Amir Dabiran, Peter Chow

Author Affiliations +

Proceedings Volume 6121, Gallium Nitride Materials and Devices; 61210F (2006) https://doi.org/10.1117/12.657894
Event: Integrated Optoelectronic Devices 2006, 2006, San Jose, California, United States

Abstract

We report on a technique for optimizing transport properties in p- and n-type AlGaN/GaN and GaN/InGaN superlattices. As we show highly conductive heterostructures can be obtained by inserting a graded doped layer, which reduces the barrier height while maintaining high sheet carrier density. For optimized p-type AlGaN/GaN SL, an eight fold reduction of the barrier height and a 1.5 times increase in sheet hole density is obtained compared to typical SL. The optimized structure yields 13 orders of magnitude improvement in vertical conductivity (σ_V) compared to typical SL, and 35 times improvement in lateral conductivity (σ_L) compared to bulk p-GaN. For optimized p-type GaN/InGaN SL, an improvement of more than 10 orders of magnitude in σ_V compared to typical SL is obtained with σ_L better than that of bulk p-InGaN. We also investigate n-type SLs as current spreading layers. A significant improvement in current distribution is obtained for the optimized SLs.

Citation Download Citation

Mohammad Z. Kauser, Andrei Osinsky, Brian Hertog, Amir Dabiran, and Peter Chow "Polarization management techniques for enhanced vertical and lateral transport in III-nitride superlattices", Proc. SPIE 6121, Gallium Nitride Materials and Devices, 61210F (3 March 2006); https://doi.org/10.1117/12.657894

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