Studies of electron trapping in III-nitride semiconductors

Olena Lopatiuk; Andrei Osinsky; Leonid Chernyak

doi:10.1117/12.658016

3 March 2006 Studies of electron trapping in III-nitride semiconductors

Olena Lopatiuk, Andrei Osinsky, Leonid Chernyak

Proceedings Volume 6121, Gallium Nitride Materials and Devices; 61210H (2006) https://doi.org/10.1117/12.658016
Event: Integrated Optoelectronic Devices 2006, 2006, San Jose, California, United States

Abstract

Effects of electron irradiation on GaN and Al_xGa_1-xN doped with acceptor-forming species (Mg, C, Fe, and Mn) were studied by cathodoluminescence and electron beam induced current techniques. Low energy electron beam irradiation was shown to induce a systematic decay of the cathodoluminescence intensity, which is accompanied by increased electronic carrier diffusion length, indicating the increase of carrier lifetime. Temperature-dependent cathodoluminescence measurements allowed to estimate the activation energy for irradiation-induced effects, which was found to be comparable to the ionization energy of the dominant acceptor species. These observations are consistent with trapping of non- equilibrium electrons on deep, non-ionized acceptor levels. In (Al) GaN:Mg and GaN:C electrons are trapped by the ground state of the neutral acceptor atom, while in TM-doped compounds, electron irradiation induced processes appear to involve a more energetically accessible excited states of the acceptors.

Citation Download Citation

Olena Lopatiuk, Andrei Osinsky, and Leonid Chernyak "Studies of electron trapping in III-nitride semiconductors", Proc. SPIE 6121, Gallium Nitride Materials and Devices, 61210H (3 March 2006); https://doi.org/10.1117/12.658016

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