Solar-blind AlGaN 256×256 p-i-n detectors and focal plane arrays

M. B. Reine; A. Hairston; P. Lamarre; K. K Wong; S. P. Tobin; A. K. Sood; C. Cooke; M. Pophristic; S. Guo; B. Perez; R. Singh; C. R. Eddy Jr.; U. Chowdhury; M. M. Wong; R. D. Dupuis; T. Li; S. P. DenBaars

doi:10.1117/12.654793

3 March 2006 Solar-blind AlGaN 256×256 p-i-n detectors and focal plane arrays

M. B. Reine, A. Hairston, P. Lamarre, K. K Wong, S. P. Tobin, A. K. Sood, C. Cooke, M. Pophristic, S. Guo, B. Perez, R. Singh, C. R. Eddy Jr., U. Chowdhury, M. M. Wong, R. D. Dupuis, T. Li, S. P. DenBaars

Author Affiliations +

Proceedings Volume 6121, Gallium Nitride Materials and Devices; 61210R (2006) https://doi.org/10.1117/12.654793
Event: Integrated Optoelectronic Devices 2006, 2006, San Jose, California, United States

Abstract

This paper reports the development of aluminum-gallium nitride (AlGaN or Al_xGa_1-xN) photodiode technology for high-operability 256×256 hybrid Focal Plane Arrays (FPAs) for solar-blind ultraviolet (UV) detection in the 260-280 nm spectral region. These hybrid UV FPAs consist of a 256×256 back-illuminated AlGaN p-i-n photodiode array, operating at zero bias voltage, bump-mounted to a matching 256×256 silicon CMOS readout integrated circuit (ROIC) chip. The unit cell size is 30×30 μm². The photodiode arrays were fabricated from multilayer AlGaN films grown by MOCVD on 2" dia. UV-transparent sapphire substrates. Improvements in AlGaN material growth and device design enabled high quantum efficiency and extremely low leakage current to be achieved in high-operability 256×256 p-i-n photodiode arrays with cuton and cutoff wavelengths of 260 and 280 nm, placing the response in the solar-blind wavelength region (less than about 280 nm) where solar radiation is heavily absorbed by the ozone layer. External quantum efficiencies (at V=0, 270 nm, no antireflection coating) as high as 58% were measured in back-illuminated devices. A number of 256×256 FPAs, with the AlGaN arrays fabricated from films grown at three different facilities, achieved response operabilities as high as 99.8%, response nonuniformities (σ/μ) as low as 2.5%, and zero-bias resistance median values as high as 1×10¹⁶ ohm, corresponding to R0A products of 7×10¹⁰ ohm-cm². Noise Equivalent Irradiance (NEI) data were measured on these FPAs. Median NEI values at 1 Hz are 250-500 photons/pixel-s, with best-element values as low as 90 photons/pixel-s at 1 Hz.

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M. B. Reine, A. Hairston, P. Lamarre, K. K Wong, S. P. Tobin, A. K. Sood, C. Cooke, M. Pophristic, S. Guo, B. Perez, R. Singh, C. R. Eddy Jr., U. Chowdhury, M. M. Wong, R. D. Dupuis, T. Li, and S. P. DenBaars "Solar-blind AlGaN 256×256 p-i-n detectors and focal plane arrays", Proc. SPIE 6121, Gallium Nitride Materials and Devices, 61210R (3 March 2006); https://doi.org/10.1117/12.654793

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