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3 March 2006 Ferroelectric PZT/AlGaN/GaN field effect transistors
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Abstract
Ferroelectric field effect transistors (FFETs) with hysteretic I-V characteristics were attained with 25 nm thick Pb(Zr0.52Ti0.48)O3 (PZT)/Si3N4 gated AlGaN/GaN heterostructure. The PZT films used in the gate of the device was deposited by magnetron rf-sputtering at the substrate temperature of 700 oC. Increasing the PZT deposition temperature from that in previous device structures from 600 oC to 700 oC we obtained much improved device performance in terms of the IV characteristics inclusive of hysteretic behavior. The pinch-off voltage was about 7 V in FFET device compared to 6 V in a the control (conventional) AlGaN/GaN device. Counterclockwise hysteresis appeared in the transfer characteristic curve of a FFET with a maximal drain current shift of about 10 mA at the gate-to-source voltage of -6 V.
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Youn-Seon Kang, Bo Xiao, Ya. I. Alivov, Qian Fan, Jinqiao Xie, and Hadis Morko "Ferroelectric PZT/AlGaN/GaN field effect transistors", Proc. SPIE 6121, Gallium Nitride Materials and Devices, 61210S (3 March 2006); doi: 10.1117/12.657584; https://doi.org/10.1117/12.657584
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