3 March 2006 Gd-implanted GaN as a candidate for spin injector
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Due to their unique physical properties GaN-based heterostructures show a great promise for spintronics applications. This stimulates the search for GaN-based ferromagnetic semiconductors which can be used for injection of spin polarized carriers in device structures. In this study, magnetic properties of GaN layers implanted with Gd+ ions to various doses were investigated. Magnetization curves of samples with Gd content nGd = 2x1017 and 2x1018 cm-3 show clear hysteresis, while the samples with nGd = 2x1016 and 2x1019 cm-3 exhibit no ferromagnetism. Most likely, the lowest Gd concentration produced magnetization below the detection limit, whereas the absence of ferromagnetism in the sample with the highest Gd content may be resulted from heavy implantation-induced damage. Curie temperatures for samples with Gd contents of 2x1017 and 2x1018 cm-3 were estimated to be larger than 300 K. Saturation magnetizations of 1550 μB and 1350 μB per Gd-atom were found at 5 K and 300 K, respectively, for the sample with nGd=2x1018 cm-3.
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V. Avrutin, V. Avrutin, Ü. Özgür, Ü. Özgür, J. Xie, J. Xie, Y. Fu, Y. Fu, F. Yun, F. Yun, H. Morko, H. Morko, V. I. Litvinov, V. I. Litvinov, } "Gd-implanted GaN as a candidate for spin injector", Proc. SPIE 6121, Gallium Nitride Materials and Devices, 61210U (3 March 2006); doi: 10.1117/12.646951; https://doi.org/10.1117/12.646951


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