Increase of output power and lifetime by improving the heat dissipation of GaN-based laser diodes

Jung-Hye Chae; Han-Youl Ryu; Kyu-Sang Kim; Kyoung-Ho Ha; Suhee Chae; Hyungkun Kim; Sung-Nam Lee; Kwang-Ki Choi; Taehoon Jang; Joong-Kon Son; Ho-Sun Baek; Youn-Joon Sung; Sakong Tan; Younhee Kim; Ok-Hyun Nam; Yong-Jo Park

doi:10.1117/12.647332

3 March 2006 Increase of output power and lifetime by improving the heat dissipation of GaN-based laser diodes

Jung-Hye Chae, Han-Youl Ryu, Kyu-Sang Kim, Kyoung-Ho Ha, Suhee Chae, Hyungkun Kim, Sung-Nam Lee, Kwang-Ki Choi, Taehoon Jang, Joong-Kon Son, Ho-Sun Baek, Youn-Joon Sung, Sakong Tan, Younhee Kim, Ok-Hyun Nam, Yong-Jo Park

Author Affiliations +

Proceedings Volume 6121, Gallium Nitride Materials and Devices; 61210Y (2006) https://doi.org/10.1117/12.647332
Event: Integrated Optoelectronic Devices 2006, 2006, San Jose, California, United States

Abstract

The enhanced output power with improved lifetime is required for the GaN-based blue-violet laser diode (LD) as a light source for Blu-ray Disc or HD-DVD. In this paper, the output power levels and aging behaviors in GaN-based LDs grown on sapphire substrates were compared in epi-up and epi-down bonding. At low current level, the two bondings show little differences in L-I characteristics. At high current level, however, the epi-up bonding shows a rapidly decreased slope efficiency in L-I characteristics with increasing current injection. On the contrary, the slope efficiency in epi-down bonding is not so much deteriorating as that in epi-up bonding. The differences in junction temperature between epi-up and epi-down bonding are large at higher current levels. The junction temperature of epi-up bonding is about two times higher than that of epi-down bonding, implying efficient heat dissipation in epi-down bonding. At aging test, the epi-down bonding LD shows lower degradation rate at the aging slope than that of epi-up bonding LD. The degradation rate is accelerated by poor heat dissipation in epi-up bonding. Thus, for the higher power and longer lifetime, it is necessary to employ efficient heat dissipation structures such as epi-down bonding for the GaN-based LD on sapphire substrate.

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Jung-Hye Chae, Han-Youl Ryu, Kyu-Sang Kim, Kyoung-Ho Ha, Suhee Chae, Hyungkun Kim, Sung-Nam Lee, Kwang-Ki Choi, Taehoon Jang, Joong-Kon Son, Ho-Sun Baek, Youn-Joon Sung, Sakong Tan, Younhee Kim, Ok-Hyun Nam, and Yong-Jo Park "Increase of output power and lifetime by improving the heat dissipation of GaN-based laser diodes", Proc. SPIE 6121, Gallium Nitride Materials and Devices, 61210Y (3 March 2006); https://doi.org/10.1117/12.647332

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