Optical properties of P ion implanted ZnO

Bao-Jen Pong; Bo-Wei Chou; Ching-Jen Pan; Fu-Chun Tsao; Gou-Chung Chi

doi:10.1117/12.644045

15 February 2006 Optical properties of P ion implanted ZnO

Bao-Jen Pong, Bo-Wei Chou, Ching-Jen Pan, Fu-Chun Tsao, Gou-Chung Chi

Proceedings Volume 6122, Zinc Oxide Materials and Devices; 612203 (2006) https://doi.org/10.1117/12.644045
Event: Integrated Optoelectronic Devices 2006, 2006, San Jose, California, United States

Abstract

Red and green emissions are observed from P ion implanted ZnO. Red emission at ~680 nm (1.82 eV) is associated with the donor-acceptor pair (DAP) transition, where the corresponding donor and acceptor are interstitial zinc (Zn_i) and interstitial oxygen (O_i), respectively. Green emission at ~ 516 nm (2.40 eV) is associated with the transition between the conduction band and antisite oxygen (O_Zn). Green emission at ~516nm (2.403 eV) was observed for ZnO annealed at 800 oC under ambient oxygen, whereas, it was not visible when it was annealed in ambient nitrogen. Hence, the green emission is most likely not related to oxygen vacancies on ZnO sample, which might be related to the cleanliness of ZnO surface, a detailed study is in progress. The observed micro-strain is larger for N ion implanted ZnO than that for P ion implanted ZnO. It is attributed to the larger straggle of N ion implanted ZnO than that of P ion implanted ZnO. Similar phenomenon is also observed in Be and Mg ion implanted GaN.

Citation Download Citation

Bao-Jen Pong, Bo-Wei Chou, Ching-Jen Pan, Fu-Chun Tsao, and Gou-Chung Chi "Optical properties of P ion implanted ZnO", Proc. SPIE 6122, Zinc Oxide Materials and Devices, 612203 (15 February 2006); https://doi.org/10.1117/12.644045

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