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2 March 2006 ZnO based light emitting diodes growth and fabrication
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ZnO and N-doped ZnO thin films were grown by MOCVD on sapphire and ZnO substrates. Diethyl zinc and O2 were used as sources for Zn and O, respectively. A specially designed plasma system was employed to produce atomic N dopant for in-situ doping. Proper disk rotation speeds were found for ZnO growth on different size wafers. High crystal quality N-doped ZnO films were grown based on optimized growth conditions. Wet chemical etch of ZnO was investigated by using NH4Cl, and etch activation energy was calculated to be 463meV. Ohmic contact on N-doped ZnO film was achieved by using Ni/Au/Al multiple layers. ZnO based p-n junction has demonstrated rectification. Electroluminescence at about 384nm was obtained from ZnO based LED.
© (2006) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
M. Pan, R. Rondon, J. Cloud, V. Rengarajan, W. Nemeth, A. Valencia, J. Gomez, N. Spencer, and J. Nause "ZnO based light emitting diodes growth and fabrication", Proc. SPIE 6122, Zinc Oxide Materials and Devices, 61220M (2 March 2006);


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