2 March 2006 Physical vapor transport crystal growth of ZnO
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Abstract
Physical vapor transport (PVT) growth of mm-size, polycrystalline ZnO has been demonstrated at temperatures exceeding 1600°C under air at atmospheric pressure. Scanning electron microscopy (SEM) analysis revealed the growth of grains and microcrystals with strong faceted morphologies suggesting near-equilibrium growth conditions. In addition, a temperature-dependent formula for the O2 sticking coefficient has been developed to predict the maximum growth rate of PVT ZnO. Combining this formula with an existing one-dimensional analytical model for PVT growth of bulk AlN, the value of the growth rate of PVT ZnO as a function of temperature and oxygen vapor partial pressure has been studied. This analysis predicts that growth rates in the order of 1mm/h could be theoretically achieved using the PVT method under non-stoichiometric oxygen-rich vapor pressures and temperatures exceeding 1600°C.
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J. Carlos Rojo, J. Carlos Rojo, Shanshan Liang, Shanshan Liang, Hui Chen, Hui Chen, Michael Dudley, Michael Dudley, } "Physical vapor transport crystal growth of ZnO", Proc. SPIE 6122, Zinc Oxide Materials and Devices, 61220Q (2 March 2006); doi: 10.1117/12.656322; https://doi.org/10.1117/12.656322
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