24 February 2006 Fabrication and characterization of AlGaAs/GaAs multiquantum well ring lasers
Author Affiliations +
Abstract
In this paper, we present the design, fabrication, and characterization of large-diameter semiconductor ring lasers with a single out coupling waveguide using AlGaAs/GaAs multiquantum well wafer. We also investigate the influence of the coupling between the ring cavity and the straight waveguide on the threshold current. It was found that the threshold current reduces with the decrease of the coupling between the ring cavity and the waveguide due to the widening of the coupling gap. By optimizing the coupling gap, we achieve a device with the threshold current of as low as 49mA.
© (2006) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Binglin Miao, Shouyuan Shi, Janusz Murakowski, Caihua Chen, Dennis W. Prather, "Fabrication and characterization of AlGaAs/GaAs multiquantum well ring lasers", Proc. SPIE 6123, Integrated Optics: Devices, Materials, and Technologies X, 61230Z (24 February 2006); doi: 10.1117/12.647210; https://doi.org/10.1117/12.647210
PROCEEDINGS
6 PAGES


SHARE
Back to Top