Wafer bonding between InP and Ce:YIG(CeY2Fe5O12) using O<sub>2</sub> plasma surface activation for an integrated optical waveguide isolator

J. W. Roh; J. S. Yang; S. H. Ok; D. H. Woo; Y. T. Byun; Y. M. Jhon; T. Mizumoto; W. Y. Lee; S. Lee

doi:10.1117/12.648371

24 February 2006 Wafer bonding between InP and Ce:YIG(CeY₂Fe₅O₁₂) using O₂ plasma surface activation for an integrated optical waveguide isolator

J. W. Roh, J. S. Yang, S. H. Ok, D. H. Woo, Y. T. Byun, Y. M. Jhon, T. Mizumoto, W. Y. Lee, S. Lee

Author Affiliations +

Proceedings Volume 6123, Integrated Optics: Devices, Materials, and Technologies X; 612316 (2006) https://doi.org/10.1117/12.648371
Event: Integrated Optoelectronic Devices 2006, 2006, San Jose, California, United States

Abstract

The wafer bonding of III-V semiconductor materials with garnet thin films has become of increasing technological importance in integration of optical components. The wafer bonding between InP wafer and GGG was demonstrated by using O₂ plasma surface activation. The same process was applied to the bonding process of InP/Ce:YIG, which is indispensable for the fabrication of an integrated optical waveguide isolator.

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J. W. Roh, J. S. Yang, S. H. Ok, D. H. Woo, Y. T. Byun, Y. M. Jhon, T. Mizumoto, W. Y. Lee, and S. Lee "Wafer bonding between InP and Ce:YIG(CeY₂Fe₅O₁₂) using O₂ plasma surface activation for an integrated optical waveguide isolator", Proc. SPIE 6123, Integrated Optics: Devices, Materials, and Technologies X, 612316 (24 February 2006); https://doi.org/10.1117/12.648371

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