Paper
3 March 2006 InP-based monolithically integrated optical gain-competition inverter
A. Y. Hsu, G. A. Vawter, E. S. Skogen, G. Peake, K. Baucom, R. J. Shul, C. Alford, B. Salters, F. Cajas, W. W. Chow
Author Affiliations +
Abstract
Monolithically-integrated optical gain-competition inverters are demonstrated at 1.55 μm in the InGaAsP/InP material system. The optical inverters consist of etched-facet slave lasers that are side-injected with tapered etchedfacet master lasers. Single-input optical inverters show improved quenching contrast for devices with larger taper width with respect to the slave laser length. Inverter performance also shows a dependence on the ridge width and lasing modes of the slave laser. Two-input optical inverters are characterized which demonstrate NAND and NOR logic operation at different slave laser currents.
© (2006) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
A. Y. Hsu, G. A. Vawter, E. S. Skogen, G. Peake, K. Baucom, R. J. Shul, C. Alford, B. Salters, F. Cajas, and W. W. Chow "InP-based monolithically integrated optical gain-competition inverter", Proc. SPIE 6124, Optoelectronic Integrated Circuits VIII, 612418 (3 March 2006); https://doi.org/10.1117/12.643995
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KEYWORDS
Etching

Integrated optics

Laser damage threshold

Laser optics

Laser scattering

Modulation

Reflectivity

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