3 March 2006 InP-based monolithically integrated optical gain-competition inverter
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Abstract
Monolithically-integrated optical gain-competition inverters are demonstrated at 1.55 μm in the InGaAsP/InP material system. The optical inverters consist of etched-facet slave lasers that are side-injected with tapered etchedfacet master lasers. Single-input optical inverters show improved quenching contrast for devices with larger taper width with respect to the slave laser length. Inverter performance also shows a dependence on the ridge width and lasing modes of the slave laser. Two-input optical inverters are characterized which demonstrate NAND and NOR logic operation at different slave laser currents.
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A. Y. Hsu, A. Y. Hsu, G. A. Vawter, G. A. Vawter, E. S. Skogen, E. S. Skogen, G. Peake, G. Peake, K. Baucom, K. Baucom, R. J. Shul, R. J. Shul, C. Alford, C. Alford, B. Salters, B. Salters, F. Cajas, F. Cajas, W. W. Chow, W. W. Chow, } "InP-based monolithically integrated optical gain-competition inverter", Proc. SPIE 6124, Optoelectronic Integrated Circuits VIII, 612418 (3 March 2006); doi: 10.1117/12.643995; https://doi.org/10.1117/12.643995
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