10 Gb/s CMOS photonics technology

Cary Gunn

doi:10.1117/12.655988

10 February 2006 10 Gb/s CMOS photonics technology

Cary Gunn

Proceedings Volume 6125, Silicon Photonics; 612501 (2006) https://doi.org/10.1117/12.655988
Event: Integrated Optoelectronic Devices 2006, 2006, San Jose, California, United States

Abstract

Freescale's production 0.13μm SOI process is used to fabricate all required electrical and optical components for 10Gb interconnect up to 2000m using only 1.7W. The optical transceiver cores are monolithically fabricated with CMOS circuitry required for bias and control as well as the electrical PHY interface. Optical multiplexing of 4 to 10 channels allows scaling to 40/100Gb.

Citation Download Citation

Cary Gunn "10 Gb/s CMOS photonics technology", Proc. SPIE 6125, Silicon Photonics, 612501 (10 February 2006); https://doi.org/10.1117/12.655988

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