Paper
1 March 2006 Emitting 1530 nm light on Si with optical gain from light emitting layer consisting of Er2O3, P2O5, Yb2O3 nanoparticles and spin-on glass
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Abstract
Emitting 1530 nm light on Silicon wafer is very useful because 1530nm is an important band in optical fiber communication. We explore a new way of light emission at 1530 nm. We demonstrate a simple and non-expensive process to form light-emitting layer. It can be deposited on silicon wafers. The properties of samples can be varied through controlling the composition. The emission efficiency can be further improved by introducing P2O5 and Yb2O3 nanoparticles into the solution. This emitting layer is able to show the signals only within several millimeters due to surface effect of nanoparticles, enabling the higher concentration of Er3+. The optical gain at 1530nm is measured using variable stripe length method. The gain coefficient can be as large as 18 cm-1.
© (2006) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Ping-Hung Shih, Kuo-Jui Sun, Yi-Shin Su, Eih-Zhe Liang, and Ching-Fuh Lin "Emitting 1530 nm light on Si with optical gain from light emitting layer consisting of Er2O3, P2O5, Yb2O3 nanoparticles and spin-on glass", Proc. SPIE 6125, Silicon Photonics, 612507 (1 March 2006); https://doi.org/10.1117/12.645505
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KEYWORDS
Erbium

Nanoparticles

Silicon

Ytterbium

Glasses

Luminescence

Semiconducting wafers

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