Germanium electroabsorption devices on silicon for optical interconnects

Yu-Hsuan Kuo; David A. B. Miller; James S. Harris

doi:10.1117/12.674733

1 March 2006 Germanium electroabsorption devices on silicon for optical interconnects

Yu-Hsuan Kuo, David A. B. Miller, James S. Harris

Proceedings Volume 6125, Silicon Photonics; 61250B (2006) https://doi.org/10.1117/12.674733
Event: Integrated Optoelectronic Devices 2006, 2006, San Jose, California, United States

Abstract

Monolithic integration of both electronic and optic components into a silicon-based platform will provide high-speed optical interconnects and solve the power-bandwidth limitations. However, the lack of strong optical effects in silicon has limited the progress in the transmitter-end applications. Recently our research had demonstrated strong quantum-confined Stark effect (QCSE) in germanium quantum-well modulators on silicon. This first strong physical mechanism for group-IV photonics has a comparable behavior to III-V material systems. With proper quantum well structure design, we also demonstrated QCSE in C-band for long distance communications with CMOS-operational temperatures. The device fabrication is also compatible with standard silicon chip processes. Since the QCSE, a type of electroabsorption effect, requires much shorter optical length, it is suitable for device miniaturizations and possible for use in both lateral and vertical modulator configurations. Moreover, silicon-germanium electroabsorption modulators are inherently photodetectors, this advantage will enable efficient transmitter/receiver applications for optical interconnects.

Citation Download Citation

Yu-Hsuan Kuo, David A. B. Miller, and James S. Harris "Germanium electroabsorption devices on silicon for optical interconnects", Proc. SPIE 6125, Silicon Photonics, 61250B (1 March 2006); https://doi.org/10.1117/12.674733

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