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28 February 2006 GaN quantum dots: nanophotonics and nanophononics
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Abstract
Self-assembled GaN quantum dots are characterized using Raman techniques. The electrical and optical properties of these GaN quantum dots are modeled in light of optoelectronic applications. Strain-induced changes in the phononic properties of these nanostructures are modeled and the strain-induced frequency shifts are compared with Raman measurements. Acoustic phonons in colloidal GaN quantum dots are modeled using a quantized elastic continuum model. Shifts observed in the Raman signatures for different excitation wavelengths provide evidence the Raman signatures of GaN quantum dots are observed.
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Takayuki Yamanaka, Dimitri Alexson, Michael A. Stroscio, Mitra Dutta, Jay Brown, Pierre Petroff, and James Speck "GaN quantum dots: nanophotonics and nanophononics", Proc. SPIE 6127, Quantum Sensing and Nanophotonic Devices III, 61270I (28 February 2006); https://doi.org/10.1117/12.641062
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