28 February 2006 Fabrication of GaN nanotubular material using MOCVD with aluminum oxide membrane
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Abstract
GaN nanotubular material is fabricated with aluminum oxide membrane in MOCVD. SEM, XRD, TEM and PL are employed to characterize the fabricated GaN nanotubular material. An aluminum oxide membrane with ordered nano holes is used as template. Gallium nitride is deposited at the inner wall of the nano holes in aluminum oxide template, and the nanotubular material with high aspect ratio is synthesized using the precursors of TMG and ammonia gas. Optimal synthesis condition in MOCVD is obtained successfully for the gallium nitride nanotubular material in this research. The diameter of GaN nanotube fabricated is approximately 200 ~ 250 nm and the wall thickness is about 40 ~ 50 nm. GaN nanotubular material consists of numerous fine GaN particulates with sizes ranging 15 to 30 nm. The composition of gallium nitride is confirmed to be stoichiometrically 1:1 for Ga and N by EDS. XRD and TEM analyses indicate that grains in GaN nanotubular material have nano-crystalline structure. No blue shift is found in the PL spectrum on the GaN nanotubular material fabricated in aluminum oxide template.
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Woo-Gwang Jung, Se-Hyuck Jung, Patrick Kung, Manijeh Razeghi, "Fabrication of GaN nanotubular material using MOCVD with aluminum oxide membrane", Proc. SPIE 6127, Quantum Sensing and Nanophotonic Devices III, 61270K (28 February 2006); doi: 10.1117/12.640337; https://doi.org/10.1117/12.640337
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