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28 February 2006 InAs quantum dot infrared photodetectors on InP by MOCVD
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Abstract
Here we report our recent results of InAs quantum dots grown on InP substrate by low-pressure metalorganic chemical vapor deposition (MOCVD) for the application of quantum dot infrared photodetector (QDIP). We have previously demonstrated the first InP-based QDIP with a peak detection wavelength at 6.4 μm and a detectivity of 1010cmHz1/2/W at 77K. Here we show our recent work toward shifting the detection wavelength to the 3-5 μm middlewavelength infrared (MWIR) range. The dependence of the quantum dot on the growth conditions is studied by atomic force microscopy, photoluminescence and Fourier transform infrared spectroscopy. The device results from the MWIR InAs/InP QDIPs are discussed. Right now, the performance of the QDIPs is still far below the predicted potential, and one of the reasons is the low quantum efficiency. Possible ways to increase the quantum efficiency of QDIPs are discussed.
© (2006) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Wei Zhang, Ho-Chul Lim, Maho Taguchi, Alain Quivy, and Manijeh Razeghi "InAs quantum dot infrared photodetectors on InP by MOCVD", Proc. SPIE 6127, Quantum Sensing and Nanophotonic Devices III, 61270M (28 February 2006); https://doi.org/10.1117/12.659051
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