28 February 2006 Infrared detectors and lasers operating in the 3-12 μm range using band-gap engineered structures with type II band-gap alignment
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Abstract
The Type II broken band-gap alignment in semiconductor structures wherein the conduction band minimum is in one semiconductor (e.g., InAs) and the valence band maximum is in another (e.g., GaInSb) offers certain unique advantages which can be utilized to realize band-gap engineered novel quantum electro-optic devices such as lasers and detectors. The advantages of the type II structures include reduced Auger recombination, extending the effective band-gap energy of materials wherein type I band-gap alignment would give rise to difficulties such as miscibility gap. In this paper we describe the work carried out at the Army Research Laboratory on type II semiconductor quantum electro-optic devices such as IR lasers and detectors operating in the 3-12 μm range. Specifically we will cover the progress made in GaSb based type II strained layer superlattice IR detectors and Interband Cascade IR Lasers. We will also present our recent work in self-assembled quantum dots which have type II band-gap alignment with the matrix material in which the dots are embedded.
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Venkataraman Swaminathan, Venkataraman Swaminathan, John W. Little, John W. Little, Richard L. Tober, Richard L. Tober, } "Infrared detectors and lasers operating in the 3-12 μm range using band-gap engineered structures with type II band-gap alignment", Proc. SPIE 6127, Quantum Sensing and Nanophotonic Devices III, 61270R (28 February 2006); doi: 10.1117/12.639493; https://doi.org/10.1117/12.639493
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