10 February 2006 Novel spatially distributed porous Si optical bandpass filters
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Abstract
To assist the growth of the telecommunication sector, new types of optical components such as those based on optical interference filter technology are critical. Existing technologies based on thin-film processing for production of optical communications filters have rapidly advanced. Although the Fabry-Perot bandpass filters made by deposition of alternate layers with high- and low- refractive index have a broad rejection band and a narrow passband, this technique does not allow for the control of filter parameters such as specification and adjustment of the transmitted wavelength at any place across the surface of the filter. The new approach discussed in the paper is directed toward the anodization of silicon to fabricate not only multilayer optical filters with a uniform passband across the field of view but also specially designed passbands at any single point in the field of view of the optical system. In particular, the realization and characterization of spatially distributed filters made of porous silicon are presented. These filters are able to select various passbands in the visible and IR regions. The filters were fabricated on p+ and p - type doped substrates. By varying the electrode configuration on the backside of wafer and the applied potential during electrochemical etching, the desired spatially distributed filter can be formed. The impact of wafer resistivity on filter parameters is discussed.
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N. Tokranova, I. Levitsky, A. Gracias, B. Xu, J. Castracane, "Novel spatially distributed porous Si optical bandpass filters", Proc. SPIE 6128, Photonic Crystal Materials and Devices IV, 612806 (10 February 2006); doi: 10.1117/12.640871; https://doi.org/10.1117/12.640871
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