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Experimental and theoretical study of multiple cations intermixing in InP-based quantum dot-in-well structure
Feasibility of conventional method of extracting internal loss and internal quantum efficiency in edge-emitting quantum dot lasers
Broad-band superluminescent light emitting diodes incorporating quantum dots in compositionally modulated quantum wells
GaAs-based 1.3 μm quantum dot laser diode with 3-stacked InAs DWELL (dots-in-a-well) structure and Al0.7Ga0.3As cladding layer
Strain-compensation in closely stacked quantum dot active regions grown by metal organic chemical vapor deposition
Size, areal density and emission energy control of InAs self assemble quantum dots grown on GaAs by selective area molecular beam epitaxy
Experimental and theoretical investigation of the third-order nonlinearity in CdS quantum dots in a dendrimer matrix