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7 February 2006 Characteristics of In(Ga)As quantum dot lasers on InP emitting at 1.5μm in continuous wave mode
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We investigate optical properties of In(Ga)As/InGaAsP/InP quantum dots (QDs) operating at 1.5 μm and device characteristics of laser diodes (LDs) made of this QD system. Round and dome-shaped QDs are formed and emission wavelength can be adjusted from 1.4 μm to 1.6 μm by changing QD growth conditions with the same InGaAsP barrier. Even though relatively large QDs were formed, the areal density of QDs is quite high (1.1×1011/cm2) compared to other QD systems. Time-resolved photoluminescence measurements were carried out at low temperature and revealed no evidence of electronic coupling between QDs in spite of this high QD density. We also fabricate LDs with these QDs as gain medium. LDs are operated in continuous-wave mode over 40°C. The lasing spectrum shows strong inhomogeneous characteristics at room temperature. This InP based QD system would be appropriate for multi-wavelength device applications such as semiconductor optical amplifier for optical communications.
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N. J. Kim, J. S. Yim, D. Lee, W. G. Jeong, S. H. Pyun, and J. W. Jang "Characteristics of In(Ga)As quantum dot lasers on InP emitting at 1.5μm in continuous wave mode", Proc. SPIE 6129, Quantum Dots, Particles, and Nanoclusters III, 612904 (7 February 2006);

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