7 February 2006 Broad-band superluminescent light emitting diodes incorporating quantum dots in compositionally modulated quantum wells
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Abstract
We discuss a technique for tailoring the emission bandwidth of a quantum dot (QD) superluminescent light emitting diode (SLED). We utilize a multi-dot-in-well (DWELL) structure with different indium compositions within each well which we term dots in compositionally modulated well (DCMWELL) structures. One key aspect of our design is the overlap of the ground and excited state emission of different DWELL layers. Such SLED devices operate CW at room temperature with powers in excess of 2.5mW per facet, and exhibit a single peak almost 85 nm wide, which is almost flat topped.
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S. K. Ray, S. K. Ray, K. M. Groom, K. M. Groom, M. D. Beattie, M. D. Beattie, H. Y. Liu, H. Y. Liu, M. Hopkinson, M. Hopkinson, R. A. Hogg, R. A. Hogg, "Broad-band superluminescent light emitting diodes incorporating quantum dots in compositionally modulated quantum wells", Proc. SPIE 6129, Quantum Dots, Particles, and Nanoclusters III, 612907 (7 February 2006); doi: 10.1117/12.644799; https://doi.org/10.1117/12.644799
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