7 February 2006 GaAs-based 1.3 μm quantum dot laser diode with 3-stacked InAs DWELL (dots-in-a-well) structure and Al0.7Ga0.3As cladding layer
Author Affiliations +
Abstract
We have investigated the characteristics of GaAs-based 1.3 μm quantum-dot laser diode (QDLD) with Al0.7Ga0.3As cladding layers. The active region of QDLD consists of 3-stacked InAs quantum-dots (QDs) in an In0.15Ga0.85As quantum well (dots-in-a-well: DWELL), which was grown by molecular beam epitaxy (MBE). For advanced performances of QDLD, the high-growth-temperature spacer layer and p-type modulation doping were applied to QDLD active region. We fabricated ridge waveguide structure LDs which had 10 ~ 50 μm ridge width with several cavity lengths and applied a high reflection (HR) coating on one-sided mirror facet. The threshold current density was 155 and 95 A/cm2 for a 2000 μm-long as-cleaved and a 1500 μm-long HR coated LDs, respectively. The lasing wavelength was 1.31 μm from the ground state transition, under a pulsed operation condition (0.1%) at room temperature. The QDLD showed simultaneous lasing at 1.31 μm and 1.23 μm from the ground state (GS) and the excited state (ES), respectively. The lasing wavelength switching from the GS to the ES depends on the cavity length, the injection current and operating temperature.
© (2006) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Kwang Woong Kim, Kwang Woong Kim, Nam Ki Cho, Nam Ki Cho, Sung Phil Ryu, Sung Phil Ryu, Jin Dong Song, Jin Dong Song, Won Jun Choi, Won Jun Choi, Jung Il Lee, Jung Il Lee, Jung Ho Park, Jung Ho Park, } "GaAs-based 1.3 μm quantum dot laser diode with 3-stacked InAs DWELL (dots-in-a-well) structure and Al0.7Ga0.3As cladding layer", Proc. SPIE 6129, Quantum Dots, Particles, and Nanoclusters III, 612909 (7 February 2006); doi: 10.1117/12.646586; https://doi.org/10.1117/12.646586
PROCEEDINGS
8 PAGES


SHARE
Back to Top