7 February 2006 Polarization dependent size of Ge nanoparticle formed by ultrafast laser
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Abstract
We present that size of Ge nanoparticle can be controlled by changing the angle between ultrafast laser polarization and crystal axis using ultrafast laser irradiation. The nanoparticle size dependence on the laser polarization with respect to the Ge crystal axis exhibits a sinusoidal function with a minimum size at (100) axis. Moreover, the measurement of transient reflection reveals the presence of large anisotropies in both its amplitude and its relaxation dynamics with a minimum at (100) crystal axis. This implies that the observed anisotropic dependence of nanostructure size of Ge is followed by a different carrier density as well as its relaxation process depending on the orientation of Ge crystal axis only at near and above threshold fluence.
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Min Ah Seo, Min Ah Seo, Dai Sik Kim, Dai Sik Kim, Hyun Sun Kim, Hyun Sun Kim, Sae Chae Jeoung, Sae Chae Jeoung, } "Polarization dependent size of Ge nanoparticle formed by ultrafast laser", Proc. SPIE 6129, Quantum Dots, Particles, and Nanoclusters III, 61290F (7 February 2006); doi: 10.1117/12.644519; https://doi.org/10.1117/12.644519
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