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7 February 2006 Size, areal density and emission energy control of InAs self assemble quantum dots grown on GaAs by selective area molecular beam epitaxy
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Abstract
We report the selective area molecular beam epitaxial (SAMBE) growth of quantum dot (QD) structures. The formation of polycrystalline deposits on dielectric masks is shown to be controlled by the growth rate and growth temperature. Furthermore, we report the size, areal density and energy control of QDs in the region of the dielectric mask. We show that for SAMBE, a reduction in InAs QD size and areal density is obtained close to a polycrstal covered dielectric mask, and that this effect is dependent upon the amount of polycrystalline GaAs coverage of the mask. We attribute this effect to the transport of indium from neighboring epitaxial areas to the polycrystalline GaAs covered mask.
© (2006) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
J. C.-C. Lin, R. A. Hogg, M. Hopkinson, P. W. Fry, I. M. Ross, A. G. Cullis, R. S. Kolodka, A. I. Tartakovskii, and M. S. Skolnick "Size, areal density and emission energy control of InAs self assemble quantum dots grown on GaAs by selective area molecular beam epitaxy", Proc. SPIE 6129, Quantum Dots, Particles, and Nanoclusters III, 61290G (7 February 2006); https://doi.org/10.1117/12.644792
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