22 February 2006 InP based QCL in MBE production machine
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Quantum Cascade Lasers (QCL), emitting between 5 and 9 μm, have been realised with a view to achieving QCLs fabrication on a production scale. The growth of the structures was carried out in a multi-wafer RIBER 49 system (13 x 2" platen), and the processing sequence involved an Inductively Coupled Plasma (ICP) step for homogeneity and reproducibility purposes. To validate the approach used, a first batch of lasers, emitting around 9μm, based on a design already published [1], has been realised. State of the art performance on these devices (Jth = 4.2 kA cm-2, η = 304 mW A-1, Pmax = 690 mW) has been achieved. A second set of strained balanced structures, emitting around 5.4μm, has been demonstrated, working in pulsed operation at room temperature(Jth = 3.9 kA cm-2, η = 362 mW A-1, Pmax = 420 mW).
© (2006) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Michel Garcia, Michel Garcia, Francois Julien Vermersch, Francois Julien Vermersch, Xavier Marcadet, Xavier Marcadet, Shailendra Bansropun, Shailendra Bansropun, Mathieu Carras, Mathieu Carras, Arnaud Wilk, Arnaud Wilk, Christine Chaix, Christine Chaix, Carlo Sirtori, Carlo Sirtori, "InP based QCL in MBE production machine", Proc. SPIE 6133, Novel In-Plane Semiconductor Lasers V, 613304 (22 February 2006); doi: 10.1117/12.645943; https://doi.org/10.1117/12.645943


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