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21 February 2006 High-power and wide wavelength range GaN-based laser diodes
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Abstract
Since the first demonstration of a pulsed InGaN laser diodes (LDs) grown on sapphire substrate in 1995, we have been developing longer lifetime and higher optical output power LDs in the 400 - 410 nm wavelength range. Moreover, we have already succeeded in the expansion of the lasing wavelength range from ultraviolet (UV) to blue-green. In this paper, we reported the recent progress of high-power and wide wavelength range GaN-based LDs with an optical output power of 20 mW single mode (375nm), 160 mW single mode (405nm), 200 mW multi mode (405nm), 50 mW single mode (445nm), 300 mW multi mode (445nm), and 20 mW single mode (473nm).
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Tokuya Kozaki, Hiroaki Matsumura, Yasunobu Sugimoto, Shin-ichi Nagahama, and Takashi Mukai "High-power and wide wavelength range GaN-based laser diodes", Proc. SPIE 6133, Novel In-Plane Semiconductor Lasers V, 613306 (21 February 2006); https://doi.org/10.1117/12.641460
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