High-power high-brightness tapered lasers with an Al-free active region at 915 nm

N. Michel; I. Hassiaoui; M. Lecomte; O. Parillaud; M. Calligaro; M. Krakowski

doi:10.1117/12.646379

22 February 2006 High-power high-brightness tapered lasers with an Al-free active region at 915 nm

N. Michel, I. Hassiaoui, M. Lecomte, O. Parillaud, M. Calligaro, M. Krakowski

Proceedings Volume 6133, Novel In-Plane Semiconductor Lasers V; 61330E (2006) https://doi.org/10.1117/12.646379
Event: Integrated Optoelectronic Devices 2006, 2006, San Jose, California, United States

Abstract

We have developed high power and high brightness tapered lasers based on an Al-free active region at 915 nm. The material structure, which was grown by MOCVD (Metallorganic Chemical Vapor Deposition), has very low internal losses of 0.5 cm^-1, a very low transparency current density of 86 A/cm², a high internal quantum efficiency of 86%, and a high characteristic temperature T₀ of 171 K. Based on these good results, we have realised index-guided tapered lasers (IG1) with a narrow output width of a few tens of microns, a narrow taper angle of less than 1^o, which deliver 1 W CW, together with an M² beam quality parameter of 3.0, and a divergence angle in the slow axis of 6^o FWHM and 10.2^o at 1/e². We have also realised a small array of six IG1 lasers, which delivers 4 W CW, together with a divergence angle of 5.6^o FWHM and 10.2^o at 1/e². Clarinet lasers were also fabricated. These devices were recently proposed to achieve high brightness together with a very narrow divergence angle, which is stable with current. These index-guided tapered lasers have also a narrow output width, but a larger taper angle of 2^o. The Clarinet lasers at 915 nm deliver 0.65 W CW, together with an M² beam quality factor of less than 1.5 at 1/e², and a very narrow divergence angle of 2.6^o FWHM, and 4.8^o at 1/e².

Citation Download Citation

N. Michel, I. Hassiaoui, M. Lecomte, O. Parillaud, M. Calligaro, and M. Krakowski "High-power high-brightness tapered lasers with an Al-free active region at 915 nm", Proc. SPIE 6133, Novel In-Plane Semiconductor Lasers V, 61330E (22 February 2006); https://doi.org/10.1117/12.646379

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