22 February 2006 High-power high-brightness tapered lasers with an Al-free active region at 915 nm
Author Affiliations +
We have developed high power and high brightness tapered lasers based on an Al-free active region at 915 nm. The material structure, which was grown by MOCVD (Metallorganic Chemical Vapor Deposition), has very low internal losses of 0.5 cm-1, a very low transparency current density of 86 A/cm2, a high internal quantum efficiency of 86%, and a high characteristic temperature T0 of 171 K. Based on these good results, we have realised index-guided tapered lasers (IG1) with a narrow output width of a few tens of microns, a narrow taper angle of less than 1o, which deliver 1 W CW, together with an M2 beam quality parameter of 3.0, and a divergence angle in the slow axis of 6o FWHM and 10.2o at 1/e2. We have also realised a small array of six IG1 lasers, which delivers 4 W CW, together with a divergence angle of 5.6o FWHM and 10.2o at 1/e2. Clarinet lasers were also fabricated. These devices were recently proposed to achieve high brightness together with a very narrow divergence angle, which is stable with current. These index-guided tapered lasers have also a narrow output width, but a larger taper angle of 2o. The Clarinet lasers at 915 nm deliver 0.65 W CW, together with an M2 beam quality factor of less than 1.5 at 1/e2, and a very narrow divergence angle of 2.6o FWHM, and 4.8o at 1/e2.
© (2006) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
N. Michel, N. Michel, I. Hassiaoui, I. Hassiaoui, M. Lecomte, M. Lecomte, O. Parillaud, O. Parillaud, M. Calligaro, M. Calligaro, M. Krakowski, M. Krakowski, } "High-power high-brightness tapered lasers with an Al-free active region at 915 nm", Proc. SPIE 6133, Novel In-Plane Semiconductor Lasers V, 61330E (22 February 2006); doi: 10.1117/12.646379; https://doi.org/10.1117/12.646379

Back to Top