22 February 2006 High power AlInGaN-based blue-violet laser diodes
Author Affiliations +
Abstract
High power and high efficiency AlInGaN-based laser diodes with 405 nm were fabricated for the post-DVD applications. Magnesium doped AlGaN/GaN multiple quantum barrier (MQB) layers were introduced into the laser diode structure, which resulted in considerable improvement in lasing performances such as threshold current and slope efficiency. Asymmetric waveguide structure was used in order to improve the characteristics of laser diodes. Aluminum content in the n-cladding layer was varied in connection with the vertical beam divergence angle and COD level. By decreasing Al content in the n-cladding layer, the vertical divergence angle was reduced to 17 degree and the COD level was enhanced to over 300mW. The maximum output power reached as high as 470 mW, the highest value ever reported for the narrow-stripe GaN LDs. In addition, the fundamental transverse-mode operation was clearly demonstrated up to 500 mW-pulsed output power.
© (2006) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
O. H. Nam, O. H. Nam, K. H. Ha, K. H. Ha, H. Y. Ryu, H. Y. Ryu, S. N. Lee, S. N. Lee, T. H. Chang, T. H. Chang, K. K. Choi, K. K. Choi, J. K. Son, J. K. Son, J. H. Chae, J. H. Chae, S. H. Chae, S. H. Chae, H. S. Paek, H. S. Paek, Y. J. Sung, Y. J. Sung, T. Sakong, T. Sakong, H. G. Kim, H. G. Kim, H. S. Kim, H. S. Kim, Y. H. Kim, Y. H. Kim, Y. J. Park, Y. J. Park, } "High power AlInGaN-based blue-violet laser diodes", Proc. SPIE 6133, Novel In-Plane Semiconductor Lasers V, 61330N (22 February 2006); doi: 10.1117/12.645579; https://doi.org/10.1117/12.645579
PROCEEDINGS
9 PAGES


SHARE
Back to Top