Translator Disclaimer
22 February 2006 Broad-area high-power CW operated InGaN laser diodes
Author Affiliations +
Abstract
We demonstrate the operation of wide-stripe InGaN laser diodes grown on bulk gallium nitride substrates obtained by high-pressure synthesis. The use of almost dislocation-free substrates resulted in very low defect densities of obtained laser structures - typically in the range of 105cm-2. We tested 3 types of devices of the dimensions: 20μmx500μm, 20μmx1000μm and 50μmx500μm. All three types of lasers showed good properties during pulse current experiments, exhibiting threshold currents of 400, 850 and 950 mA, respectively. The lasing wavelength varied between 405 and 420 nm, depending on the particular device. After p-down mounting on diamond heatspreaders, the first two types of lasers showed CW operation with a total output power reaching 200 mW. These devices, after optimization, offer good prognostics for reaching an optical power in the 1 W range needed for the applications in large area displays.
© (2006) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
P. Wiśniewski, R. Czernecki, P. Prystawko, M. Maszkowicz, M. Leszczyński, T. Suski, I. Grzegory, S. Porowski, M. Marona, T. Świetlik, and P. Perlin "Broad-area high-power CW operated InGaN laser diodes", Proc. SPIE 6133, Novel In-Plane Semiconductor Lasers V, 61330Q (22 February 2006); https://doi.org/10.1117/12.645049
PROCEEDINGS
10 PAGES


SHARE
Advertisement
Advertisement
RELATED CONTENT


Back to Top