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22 February 2006 High performance 1.3μm quantum dot lasers on GaAs and Silicon
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Abstract
We have investigated the molecular beam epitaxial growth and characteristics of self-organized In(Ga)As quantum dot lasers grown on GaAs and silicon. Utilizing the techniques of tunnel injection and acceptor-doping of quantum dots, we have achieved high performance 1.3 μm InAs quantum dot lasers on GaAs, which exhibit Jth=180 A/cm2, T0=∞, dg/dn≈1×10-14 cm2, f-3dB=11 GHz, chirp of 0.1 Å and zero α-parameter. Utilizing thin (⩽ 2 μm) GaAs buffer layers and quantum dots as dislocation filters, we have demonstrated room-temperature operational In0.5Ga0.5As quantum dot lasers grown directly on silicon, which are characterized by relatively low threshold current (Jth ~ 900 A/cm2), high output power (> 150 mW), large characteristic temperature (T0 = 244 K) and constant output slope efficiency (⩾ 0.3 W/A) in the temperature range of 5 to 95 °C.
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P. Bhattacharya, Z. Mi, J. Yang, and S. Fathpour "High performance 1.3μm quantum dot lasers on GaAs and Silicon", Proc. SPIE 6133, Novel In-Plane Semiconductor Lasers V, 61330U (22 February 2006); https://doi.org/10.1117/12.641472
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