7 February 2006 Heterogeneous integration of silicon and AlGaInAs for a silicon evanescent laser
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We report a novel laser architecture, the silicon evanescent laser (SEL), that utilizes a silicon waveguide and offset AlGaInAs quantum wells. The silicon waveguide is fabricated on a Silicon-On-Insulator (SOI) wafer using a CMOS-compatible process, and is bonded with the AlGaInAs quantum well structure using low temperature O2 plasma-assisted wafer bonding. The optical mode in the SEL is predominantly confined in the passive silicon waveguide and evanescently couples into the III-V active region providing optical gain. This approach combines the advantages of high gain III-V materials and the integration capability of silicon technology. Moreover, the difficulty of coupling an external laser source is overcome as the hybrid waveguide can be self-aligned to silicon-based passive optical devices. The SEL lases continuous wave (CW) at 1568 nm with a threshold of 23 mW. The maximum single-sided fiber-coupled CW output power is 4.5 mW. The SEL characteristics are dependent on the silicon waveguide dimensions resulting in different confinement factors in the III-V gain region.
© (2006) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Alexander W. Fang, Alexander W. Fang, Hyundai Park, Hyundai Park, Richard Jones, Richard Jones, Oded Cohen, Oded Cohen, Mario J. Paniccia, Mario J. Paniccia, John E. Bowers, John E. Bowers, } "Heterogeneous integration of silicon and AlGaInAs for a silicon evanescent laser", Proc. SPIE 6133, Novel In-Plane Semiconductor Lasers V, 61330W (7 February 2006); doi: 10.1117/12.660735; https://doi.org/10.1117/12.660735


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