High-power diode laser arrays emitting at 2 µm with reduced far-field angle

Márc T. Kelemen; Marcel Rattunde; Jürgen Weber; Christian Pfahler; Gudrun Kaufel; Rudolf Moritz; Johannes Schmitz; Michael Mikulla; Joachim Wagner

doi:10.1117/12.645603

22 February 2006 High-power diode laser arrays emitting at 2 μm with reduced far-field angle

Márc T. Kelemen, Marcel Rattunde, Jürgen Weber, Christian Pfahler, Gudrun Kaufel, Rudolf Moritz, Johannes Schmitz, Michael Mikulla, Joachim Wagner

Author Affiliations +

Proceedings Volume 6133, Novel In-Plane Semiconductor Lasers V; 613316 (2006) https://doi.org/10.1117/12.645603
Event: Integrated Optoelectronic Devices 2006, 2006, San Jose, California, United States

Abstract

GaSb based diode laser arrays emitting at wavelengths around 2 μm have a significant potential for a variety of applications including material processing, such as welding of transparent plastic materials, and optical pumping of mid-infrared solid state lasers. Even though high output power broad area single emitters and laser arrays have already been demonstrated, they all suffer from a large fast axis beam divergence of typically 67° FWHM due to the broadened waveguide design employed. Here we will present results on (AlGaIn) (AsSb) quantum-well diode laser single emitters and linear arrays consisting of 19 emitters on a 1 cm long bar emitting at around 1.9 μm. To improve on the poor fast axis beam divergence we abandoned the broadened waveguide concept and changed over to a novel waveguide design which features a rather narrow waveguide core. This results in a remarkable reduction in fast axis beam divergence to 44° FWHM for the new waveguide design. For single emitters a cw output power of more than 1.9 W have been observed. 16.9 W in continuous-wave mode at a heat sink temperature of 20 °C have been achieved for arrays. The maximum wall-plug efficiency amounts to 26% both for the single emitters and the laser arrays. These efficiencies are among the highest values reported so far for GaSb based diode lasers, and allow us to use passively cooled and thus less expensive heat sinking technologies.

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Márc T. Kelemen, Marcel Rattunde, Jürgen Weber, Christian Pfahler, Gudrun Kaufel, Rudolf Moritz, Johannes Schmitz, Michael Mikulla, and Joachim Wagner "High-power diode laser arrays emitting at 2 μm with reduced far-field angle", Proc. SPIE 6133, Novel In-Plane Semiconductor Lasers V, 613316 (22 February 2006); https://doi.org/10.1117/12.645603

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