22 February 2006 High power LEDs for visible and infrared emission
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Abstract
The market entrance of thinfilm based, substrate-less LEDs has stimulated the field of high-brightness LEDs. One of the most prominent advantages of thinfilm LEDs is the possibility to achieve a high light extraction efficiency independently of the chip area. This feature is particularly suitable for large-area, high-flux devices. In this paper, we report on high-power LEDs with a chip-area of 1 mm2 for red and infrared emission. Mounted in packages with improved heat sinking and operated at a continuous-wave (cw) current of 800mA, the devices achieve an output power of 440 mW both for red (λ = 615 nm) and infrared (λ = 850 nm) wavelengths. Together with Osram's ThinGaN chips, a family of devices is available with very similar emission characteristics, performance and geometry, which allow the assembly of powerful light engines for a number of advanced applications.
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S. Illek, C. Jung, R. Windisch, H. Zull, K. Streubel, "High power LEDs for visible and infrared emission", Proc. SPIE 6134, Light-Emitting Diodes: Research, Manufacturing, and Applications X, 613401 (22 February 2006); doi: 10.1117/12.661559; https://doi.org/10.1117/12.661559
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