22 February 2006 Vertical GaN based light-emitting diodes on metal alloy substrate for solid state lighting application
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Abstract
Vertical GaN based Light Emitting Diodes on metal alloy substrate were realized and characterized for solid state lighting application. An efficiency of more than 70 lumens/watt was achieved. In addition, these LEDs exhibit many advantages over those on sapphire under extreme operation conditions for general lighting application.
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T. Doan, T. Doan, C. Chu, C. Chu, C. Chen, C. Chen, W. Liu, W. Liu, J. Chu, J. Chu, J. Yeh, J. Yeh, H. Chen, H. Chen, F. Fan, F. Fan, C. Tran, C. Tran, } "Vertical GaN based light-emitting diodes on metal alloy substrate for solid state lighting application", Proc. SPIE 6134, Light-Emitting Diodes: Research, Manufacturing, and Applications X, 61340G (22 February 2006); doi: 10.1117/12.673987; https://doi.org/10.1117/12.673987
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