Kelvin force microscopy on a (Al1-xGax)0.5In0.5P light-emitting diode

Klaus-Dieter Katzer; Wolfgang Mertin; Gerd Bacher; Arndt Jaeger; Klaus Streubel

doi:10.1117/12.645768

22 February 2006 Kelvin force microscopy on a (Al_1-xGa_x)_0.5In_0.5P light-emitting diode

Klaus-Dieter Katzer, Wolfgang Mertin, Gerd Bacher, Arndt Jaeger, Klaus Streubel

Proceedings Volume 6134, Light-Emitting Diodes: Research, Manufacturing, and Applications X; 61340I (2006) https://doi.org/10.1117/12.645768
Event: Integrated Optoelectronic Devices 2006, 2006, San Jose, California, United States

Abstract

High-brightness light-emitting diodes (LED) based on AlGaInP combines the possibility to achieve high efficiency with the flexibility of tuning the emission wavelength over a large range of the visible spectrum. For optimizing the device characteristics an accurate determination of the electronic properties, like e. g. the voltage drop across the semiconductor layer sequence, is desirable. We demonstrate the potential of Kelvin Force Microscopy for quantitative investigations of the voltage drop across the heterostructure layers of an operating AlGaInP LED. The surface potential was measured for external biases between -2.0 V and +1.86 V. By subtracting the zero bias result the voltage drop could be extracted quantitatively. In the low voltage regime, most of the voltage drops in the active layer. Above +1.5 V an additional voltage drop occurs on the p-side of the device, i. e. outside the active layer sequence, which reduces the efficiency of the LED. By comparing experimental data with simulations we will discuss possible mechanisms of these findings.

Citation Download Citation

Klaus-Dieter Katzer, Wolfgang Mertin, Gerd Bacher, Arndt Jaeger, and Klaus Streubel "Kelvin force microscopy on a (Al_1-xGa_x)_0.5In_0.5P light-emitting diode", Proc. SPIE 6134, Light-Emitting Diodes: Research, Manufacturing, and Applications X, 61340I (22 February 2006); https://doi.org/10.1117/12.645768

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