Translator Disclaimer
2 March 2006 Light induced degradation in amorphous silicon photodiodes and implication for diagnostic medical imaging application
Author Affiliations +
Abstract
Amorphous silicon photodiodes are increasingly being used as fundamental components in digital diagnostic medical imaging system including large area chest radiography, mammography and real time fluoroscopy. The intrinsic a-Si:H material (i-a-Si:H), commonly deposited by Plasma Enhanced Chemical Vapor Deposition (PECVD), is well known to suffer from both light and bias stress induced instabilities over time that can result in an increase in dark current and a decrease in photoconductivity. In contrast, research in Hot-Wire Chemical Vapor Deposition (HWCVD) indicates that a-Si:H films grown by HWCVD can have superior physical and electronic properties to those grown by PECVD. In this research, we report on the material properties and stability of i-a-Si:H material by comparing the photoconductivity degradation of the HWCVD and PECVD films over time. Then, we discuss the p-i-n diode fabrication process and examine the leakage and photo-current degradation in the HWCVD and PECVD photodiode structures over time via bias and time stress measurements. Also, we investigate the quantum efficiency degradation over time in a-Si:H p-i-n detectors grown by PECVD.
© (2006) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
I. Khodami, M.M. Adachi, M. Malhotra, F. Taghibakhsh, J.A. Rowlands, K.S. Karim, and K.L. Kavanagh "Light induced degradation in amorphous silicon photodiodes and implication for diagnostic medical imaging application", Proc. SPIE 6142, Medical Imaging 2006: Physics of Medical Imaging, 61422U (2 March 2006); https://doi.org/10.1117/12.653862
PROCEEDINGS
9 PAGES


SHARE
Advertisement
Advertisement
Back to Top