9 June 2006 Characteristics of front-illuminated visible-blind UV photodetector based on GaN p-i-n photodiodes with high quantum efficiency
Author Affiliations +
Proceedings Volume 6149, 2nd International Symposium on Advanced Optical Manufacturing and Testing Technologies: Advanced Optical Manufacturing Technologies; 614917 (2006) https://doi.org/10.1117/12.674231
Event: 2nd International Symposium on Advanced Optical Manufacturing and Testing Technologies, 2005, Xian, China
Abstract
In this work, we reported the fabrication and characterization of an AlxGa1-xN /GaN hetero-epitaxial front-illuminated visible-blind UV photodetector with very high external quantum efficiency. This device was grown on one side of polished sapphire substrate using a low-temperature AlN buffer layer created by three-pocket multi-wafer system metalorganic chemical vapor deposition (MOCVD) with a vertical reactor. This device consisted of a 2.5μm thick GaN n-layer, a 0.4μm thick GaN i-layer and Al0.1Ga0.9N "window layer", followed by a 10 nm GaN:Mg p+ contact layer. In order to investigate the effect of p- Al0.1Ga0.9N thickness on the characteristics of the photodetector, three samples only with different p-AlGaN thicknesses of 0.1μm and 0.15μm were fabricated. All of the device processing was completed using standard semiconductor processing techniques that included photolithography, metallization and etching. Compared the results of these three samples, the sample with 0.15μm thick p-AlGaN possesses the highest quantum efficiency and its zero-bias peak responsivity was found around 0.20A/W at 365 nm, corresponding to an external quantum efficiency of 85.6%. Moreover, this device exhibits a low dark current density of 3.16nA/cm2 at zero-bias.
© (2006) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Da You, Da You, Yingwen Tang, Yingwen Tang, Jintong Xu, Jintong Xu, Haimei Gong, Haimei Gong, } "Characteristics of front-illuminated visible-blind UV photodetector based on GaN p-i-n photodiodes with high quantum efficiency", Proc. SPIE 6149, 2nd International Symposium on Advanced Optical Manufacturing and Testing Technologies: Advanced Optical Manufacturing Technologies, 614917 (9 June 2006); doi: 10.1117/12.674231; https://doi.org/10.1117/12.674231
PROCEEDINGS
6 PAGES


SHARE
RELATED CONTENT


Back to Top