Preparation of Si-based films by pulse laser deposition and luminescence properties

Dekai Zhang; Xiaoyun Hu; Ting Li

doi:10.1117/12.674291

9 June 2006 Preparation of Si-based films by pulse laser deposition and luminescence properties

Dekai Zhang, Xiaoyun Hu, Ting Li

Author Affiliations +

Proceedings Volume 6149, 2nd International Symposium on Advanced Optical Manufacturing and Testing Technologies: Advanced Optical Manufacturing Technologies; 61492P (2006) https://doi.org/10.1117/12.674291
Event: 2nd International Symposium on Advanced Optical Manufacturing and Testing Technologies, 2005, Xian, China

Abstract

We report a photoluminescence (PL) study of nanometer Si-based films deposited by Pulse Laser Deposition (PLD).The surface appearance and microstructure of the films were characterized by Atomic Force Microscope (AFM), X-Ray Diffraction (XRD) and Raman scattering spectroscopy (Raman).The effects of several experimental parameters such as gas pressure, atmosphere and anneal temperature on the luminescence properties of the films were studied. The mechanism of PL property of the Si-rich Si0₂ films was discussed, we suggest that the PL is derived from quantum confinement effect of Si nanometer grains and the non-bridge oxygen vacancy defects of silica.

Citation Download Citation

Dekai Zhang, Xiaoyun Hu, and Ting Li "Preparation of Si-based films by pulse laser deposition and luminescence properties", Proc. SPIE 6149, 2nd International Symposium on Advanced Optical Manufacturing and Testing Technologies: Advanced Optical Manufacturing Technologies, 61492P (9 June 2006); https://doi.org/10.1117/12.674291

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