9 June 2006 Preparation of Si-based films by pulse laser deposition and luminescence properties
Author Affiliations +
Proceedings Volume 6149, 2nd International Symposium on Advanced Optical Manufacturing and Testing Technologies: Advanced Optical Manufacturing Technologies; 61492P (2006) https://doi.org/10.1117/12.674291
Event: 2nd International Symposium on Advanced Optical Manufacturing and Testing Technologies, 2005, Xian, China
Abstract
We report a photoluminescence (PL) study of nanometer Si-based films deposited by Pulse Laser Deposition (PLD).The surface appearance and microstructure of the films were characterized by Atomic Force Microscope (AFM), X-Ray Diffraction (XRD) and Raman scattering spectroscopy (Raman).The effects of several experimental parameters such as gas pressure, atmosphere and anneal temperature on the luminescence properties of the films were studied. The mechanism of PL property of the Si-rich Si02 films was discussed, we suggest that the PL is derived from quantum confinement effect of Si nanometer grains and the non-bridge oxygen vacancy defects of silica.
© (2006) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Dekai Zhang, Dekai Zhang, Xiaoyun Hu, Xiaoyun Hu, Ting Li, Ting Li, } "Preparation of Si-based films by pulse laser deposition and luminescence properties", Proc. SPIE 6149, 2nd International Symposium on Advanced Optical Manufacturing and Testing Technologies: Advanced Optical Manufacturing Technologies, 61492P (9 June 2006); doi: 10.1117/12.674291; https://doi.org/10.1117/12.674291
PROCEEDINGS
7 PAGES


SHARE
Back to Top