9 June 2006 ZnO thin films prepared by ion beam enhanced deposition method
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Proceedings Volume 6149, 2nd International Symposium on Advanced Optical Manufacturing and Testing Technologies: Advanced Optical Manufacturing Technologies; 61492U (2006) https://doi.org/10.1117/12.674297
Event: 2nd International Symposium on Advanced Optical Manufacturing and Testing Technologies, 2005, Xian, China
Abstract
Ion beam enhanced deposition method was adopted to prepare In-N co-doped and Al-N co-doped ZnO films on Si, SiO2 and glass substrates. ZnO mixed with In2O3 or Al2O3 powder sputtering target was used and during the deposition N+/Ar+ mixed beam with an energy of 40KeV and a beam current of 2mA implanted into the deposited films. The XRD results showed that all polycrystalline In-N and Al-N co-doped ZnO films deposited on Si, SiO2 and glass substrates have a preferred (002) orientation. The as-deposited In-N co-doped ZnO film showed p-type and had a resistivity of 2.4Ωcm on SiO2 substrate. After annealed in N2, the lowest resistivity of p type In-N co-doped ZnO films was 0.8Ωcm. While Al-N co-doped ZnO film showed n type.
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Ningyi Yuan, Ningyi Yuan, Jinhua Liao, Jinhua Liao, Lining Fan, Lining Fan, Xiuqing Wang, Xiuqing Wang, Yi Zhou, Yi Zhou, } "ZnO thin films prepared by ion beam enhanced deposition method", Proc. SPIE 6149, 2nd International Symposium on Advanced Optical Manufacturing and Testing Technologies: Advanced Optical Manufacturing Technologies, 61492U (9 June 2006); doi: 10.1117/12.674297; https://doi.org/10.1117/12.674297
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