9 June 2006 Different deposition technology affecting structure and performance of Si film
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Proceedings Volume 6149, 2nd International Symposium on Advanced Optical Manufacturing and Testing Technologies: Advanced Optical Manufacturing Technologies; 614937 (2006) https://doi.org/10.1117/12.674325
Event: 2nd International Symposium on Advanced Optical Manufacturing and Testing Technologies, 2005, Xian, China
Abstract
This paper mainly discusses the Si film which is deposited on the GaAs substrate with the IBAD E-beam coating system. By changing the technical conditions to get Si film with different parameters. Further studied on the test, and optimized processing parameter to get final Si film with more dense structure, higher index and minimum absorption. At the same time, considering the better stress matching of the substrate, selected minimal possible layers but realized even more reflection in the process of matching lower index materials. The mainly parameters are temperature of substrate, vacuum pressure, deposition speed and different gas flow, etc. Detailed analysis and evaluation based on the measuring curves and result of the Si test are presented.
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Xiuhua Fu, Xiuhua Fu, Peng Lu, Peng Lu, Baoxue Bo, Baoxue Bo, Xiumin Li, Xiumin Li, Ruojing Yin, Ruojing Yin, Weibo Duan, Weibo Duan, } "Different deposition technology affecting structure and performance of Si film", Proc. SPIE 6149, 2nd International Symposium on Advanced Optical Manufacturing and Testing Technologies: Advanced Optical Manufacturing Technologies, 614937 (9 June 2006); doi: 10.1117/12.674325; https://doi.org/10.1117/12.674325
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